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| inchange semiconductor product specification silicon npn power transistors 2SC2590 description ? ? with to-126 package ? complement to type 2sa1110 ?excellent current i c characteristics of forward current transfer ratio h fe vs. collector ? high transition frequency f t ? optimum for the driver stage of a 40 w to 60 w output amplifier applications ? for low-frequency power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 0.5 a i cm collector current-peak 1.0 a p c collector power dissipation t c =25 ?? 1.2* w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? note) *: without heat sink
inchange semiconductor product specification 2 silicon npn power transistors 2SC2590 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =100 | a;i b =0 120 v v (br)ebo emitter-base breakdown voltage i e =10 | a ;i c =0 5 v v cesat collector-emitter saturation voltage i c =0.3a ;i b =30ma 1.0 v v besat base-emitter saturation voltage i c =0.3a ;i b =30ma 1.2 v h fe-1 dc current gain i c =150ma ; v ce =10v 90 220 h fe-2 dc current gain i c =0.5a ; v ce =5v 65 100 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf f t transition frequency i c =50ma ; v cb =10v,f=200mhz 200 mhz ? h fe-1 classifications q r 90-155 130-220 inchange semiconductor product specification 3 silicon npn power transistors 2SC2590 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors 2SC2590 |
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